| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4991
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2020-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f7bba291ee0ffbea83d7c2afc279d4c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0d91d45e3b5e9b2fbc2060e38a4e468 |
| publicationDate |
2021-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202117856-A |
| titleOfInvention |
Method of manufacturing semiconductor device |
| abstract |
A dummy gate is formed over a substrate. A sacrificial layer is formed over the dummy gate. An interlayer dielectric (ILD) is formed over the dummy gate and over the sacrificial layer. The dummy gate is replaced with a metal-containing gate. The sacrificial layer is removed. A removal of the sacrificial layer leaves air gaps around the metal-containing gate. The air gaps are then sealed. |
| priorityDate |
2019-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |