| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73a22eaa7a8147cc7e4752a2d5bfbb34 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7885 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2020-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa62d0fc6bc4a070a57ece5052f6deb6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db6452c76fa9ca2f8f839c634b5c16ec |
| publicationDate |
2021-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202117849-A |
| titleOfInvention |
Method for manufacturing semiconductor structure and capable of controlling thicknesses of oxide layers |
| abstract |
A method for manufacturing a semiconductor structure includes forming a first oxide layer on a wafer; forming a silicon nitride layer on the first oxide layer; forming a plurality of trenches; filling an oxide material in the trenches to form a plurality of shallow trench isolation regions; removing the silicon nitride layer without removing the first oxide layer; using a photomask to apply a photoresist for covering a first part of the first oxide layer on a first area and exposing a second part of the first oxide layer on a second area; and removing the second part of the first oxide layer while remaining the first part of the first oxide layer. |
| priorityDate |
2019-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |