| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1d29f7ac2c7f9be9f7dae1a83bbb5c92 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C381-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D207-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C211-63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F9-5442
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D487-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-40 |
| filingDate |
2020-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8239b8f20bb80385f3d8c257f24328f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8505e4b1993e25183870f36c1ee27cb6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_329005bfd234d28c972c80eb89689e59
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_207902c49bcb07a75b1726e3582f0280 |
| publicationDate |
2021-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202117080-A |
| titleOfInvention |
Inhibitors to inhibit the production of RuO gas and methods to inhibit the production of RuO gas |
| abstract |
The present invention provides RuO inhibitors inhibit a step in the manufacture of a semiconductor device using the wafer containing semiconductor contact with the treatment liquid on the occasion of generating the ruthenium 4 RuO 4 gas to suppress gas generation and method of inhibiting RuO 4 gas. Specifically, there is provided an inhibitor for suppressing the generation of RuO 4 gas, which is used to suppress RuO 4 gas generated when a semiconductor wafer containing ruthenium comes into contact with a processing liquid in a semiconductor formation step, the inhibitor includes an onium salt, the onium salt Contains onium ion and bromide ion. It also provides a method for suppressing the generated RuO 4 gas by adding the inhibitor to the ruthenium treatment liquid or the ruthenium-containing liquid used in the semiconductor formation step. |
| priorityDate |
2019-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |