| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7886f9841c03e2449d28f454ebbe1dc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2020-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b30be179790fa9d5377b72805c15a84c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_641af317ceae25f58eb2080ee3831f06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93ad4d09da8ab485091cedd97b6fc39c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d37ffea7cf4603a613d4cd6bcbe2f799 |
| publicationDate |
2021-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202115270-A |
| titleOfInvention |
Group vi metal deposition process |
| abstract |
Provided is a process for the vapor deposition of molybdenum or tungsten, and the use of molybdenum hexacarbonyl (Mo(CO)6) or tungsten hexacarbonyl (W(CO)6) for such deposition, e.g., in the manufacture of semiconductor devices in which molybdenum-containing or tungsten-containing films are desired. In accordance with one aspect of the invention, molybdenum hexacarbonyl (Mo(CO)6) has been found in vapor deposition processes such as chemical vapor deposition (CVD) to provide low resistivity, high deposition rate films in conjunction with a pulsed deposition process in which a step involving a brief pulse of H2O is utilized. This pulsing with H2O vapor was found to be effective in reducing the carbon content of films produced from Mo(CO)6- based CVD processes. |
| priorityDate |
2019-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |