abstract |
The imaging element of the present invention is provided with a photoelectric conversion section, which is formed by stacking a first electrode 21, a photoelectric conversion layer 23A containing an organic material, and a second electrode 22, between the first electrode 21 and the photoelectric conversion layer 23A An inorganic oxide semiconductor material layer 23B is formed therebetween, and the inorganic oxide semiconductor material constituting the inorganic oxide semiconductor material layer 23B includes aluminum (Al) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms. |