| abstract |
A three dimensional (3D) integrated circuit (IC) stack, includes a first IC die having a first substrate and a first interconnect structure over a front side of the first substrate; a second IC die having a second substrate and a second interconnect structure over the front side of the second substrate; and a third IC die vertically between the first and second IC dies and having a third substrate, a third interconnect structure over the front side of the third substrate, and a third bonding structure over a backside of the third substrate. A heat dissipation path extends from the third substrate to at least the first or second substrate, and includes a backside contact that extends from the third bonding structure to the backside of the third substrate and that is thermally coupled to at least the first or second interconnect structure. |