| abstract |
Provided is a chemical vapor deposition raw material, which has basic characteristics as a raw material for chemical vapor deposition and which can form a manganese thin film by using a reducing gas such as hydrogen as a reaction gas. Specifically, a raw material for chemical vapor deposition for producing a manganese thin film or a manganese compound thin film by a chemical vapor deposition method, wherein the raw material is composed of an organomanganese compound represented by the following chemical formula 1, in which cyclopentadienyl ligand (L1) and isocyanide ligand (L2) are coordinated to manganese.n[Chemical Formula 1] In the above formula, the substituents R 1 nto R 5 nof the cyclopentadienyl ligand (L1) are each hydrogen or a linear, branched or cyclic alkyl group having 1 to 4 carbon atoms. The substituent R 6 nof the isocyanide ligand (L2) is a linear, branched, or cyclic alkyl group having 1 to 4 carbon atoms. |