| abstract |
The subject of the present invention is to suppress the oxidation of the substrate while making the film formed on the substrate a low-dielectric coefficient film.nThe present invention has the following steps: (a) For a substrate where the substrate of at least one of a conductive metal element-containing film and a nitride film is exposed on the surface, a first processing gas that does not contain an oxidizing gas is supplied, thereby, the substrate A step of forming an oxygen-free first film containing silicon, carbon, and nitrogen with a first thickness; and (b) supplying a second process gas containing an oxidizing gas to the substrate, whereby the first film is more A step of forming a second film containing silicon, oxygen, and nitrogen with a thicker second thickness; in (b), the first film absorbs oxygen atoms originating from the oxidizing gas diffused from the surface of the first film toward the substrate , In order to modify the first membrane. |