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publicationDate 2021-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-202102711-A
titleOfInvention Manufacturing method of semiconductor device, substrate processing device and recording medium
abstract [Question] To provide a technology capable of controlling the film thickness distribution between the substrates of the thin films formed on a plurality of substrates.n[Solution]n(a) A process of arranging a plurality of first substrates and a second substrate with a smaller surface area than the first substrate in a direction perpendicular to the surface direction and storing them in a processing chamber; and (b) by arranging a plurality of first substrates and second substrates The process of supplying processing gas to the substrate arranging area of the first substrate to form a thin film on the plurality of first substrates. In (b) includes the area where at least a part of the plurality of first substrates are arranged, and does not include the second substrate area where the second substrates are arranged. 1 Supply area, supply diluent gas, or do not supply diluent gas, and supply areas other than the first supply area, that is, the second supply area including the area where the second substrate is arranged, compared to the first supply area The flow rate of diluent gas is larger, and the diluent gas is supplied to the project.
priorityDate 2019-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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