Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32146 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
filingDate |
2020-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e72cdc0ff85db1da6c6f43192e8ae5c1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b0c4a13714ab7d57826403ec427beca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8fc29bfb0eb0cea816ebb7fd9d616f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_410eb3d7a5082e7ef63f384ddab779cb |
publicationDate |
2021-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-202101521-A |
titleOfInvention |
Plasma processing method and plasma processing device |
abstract |
It has an etching process to etch wafers in the chamber, and a plasma treatment method that can remove residual halogen in the chamber in a short time, etc., to improve throughput. The plasma treatment method has: by introducing halogen elements into the chamber The plasma cleaning process to remove foreign matter on the inner wall of the chamber; in the chamber, by alternately repeating the on state and off state of the plasma containing oxygen, the plasma cleaning process is left in A residual halogen removal process in which halogen elements in the chamber are removed. |
priorityDate |
2019-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |