http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202101521-A

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filingDate 2020-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2021-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-202101521-A
titleOfInvention Plasma processing method and plasma processing device
abstract It has an etching process to etch wafers in the chamber, and a plasma treatment method that can remove residual halogen in the chamber in a short time, etc., to improve throughput. The plasma treatment method has: by introducing halogen elements into the chamber The plasma cleaning process to remove foreign matter on the inner wall of the chamber; in the chamber, by alternately repeating the on state and off state of the plasma containing oxygen, the plasma cleaning process is left in A residual halogen removal process in which halogen elements in the chamber are removed.
priorityDate 2019-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 26.