http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202046397-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa0f2776bcc27d5099aa97f3212e1681 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67132 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3043 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301 |
filingDate | 2020-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7c6402c395d4d1e3274cf839cfc3092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0403167d33e74a73a373ffca9b1657ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42ed042fa6c78afc4a5921b516cac229 |
publicationDate | 2020-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-202046397-A |
titleOfInvention | Wafer processing method |
abstract | The present invention is a wafer processing method, and its subject is to provide: a wafer processing method that can improve the flexural strength of a device chip.nThe solution is that the wafer processing method has: a step of attaching a protective tape to a protective member on the surface side of the wafer, and holding the wafer with a chuck by the protective tape, and grinding the back side of the wafer to thin it The grinding step to a certain thickness, the grinding step of polishing the back side of the wafer ground in the grinding step with a polishing pad, and the grinding step of removing the broken layer formed in the grinding step, and the grinding step of the wafer polished in the grinding step On the back side, the inert gas is supplied in a plasma state, and then the plasma processing step of removing the distorted surface layer on the back side of the wafer. |
priorityDate | 2019-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.