| abstract |
The present invention provides an etching composition for selectively etching a titanium nitride hard mask, comprising basic compound, chelating agent, corrosion inhibitor and solvent. The etching composition provided by the present invention has excellent etching selectivity, which is able to quickly remove titanium nitride (TiN) and residues after dry etching but does not damage a low-k layer and a metal conductor layer. The etching composition retains certain oxidizing power, etching selectivity and pH value after repeated use, and is suitable for use in a recycle mode process. |