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filingDate 2019-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-202044526-A
titleOfInvention Semiconductor integrated circuit and circuit layout method thereof
abstract A semiconductor integrated circuit includes a semiconductor substrate, a front metal layer, a sub-metal layer and a back metal layer. The semiconductor substrate has a substrate through hole, an upper surface and a lower surface. The front metal layer is formed on the upper surface of the semiconductor substrate. The substrate through hole has an inner surface. The inner surface of the substrate through hole includes a bottom and one side. The bottom of the inner surface of the substrate through hole is at least partially defined by the front metal layer. The sides of the inner surface of the substrate through hole are at least partially defined by the semiconductor substrate. The seed metal layer is formed on the inner surface of the through hole of the substrate and the lower surface of the semiconductor substrate to connect the seed metal layer with the front metal layer. The seed metal layer has an outer surface. The back metal layer is formed on the outer surface of the seed metal layer. The aspect ratio of one of the through holes of the substrate is greater than or equal to 0.2 and less than or equal to 3, thereby improving the thickness uniformity of one of the back metal layers.
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