| abstract |
The present invention improves the uniformity of the in-plane film thickness of the film formed on the substrate.nThe present invention is provided with: non-simultaneously: (a) the step of supplying raw material gas and inert gas to the substrate in the processing chamber, and (b) the step of supplying reactive gas to the substrate in the processing chamber; the cycle is performed a predetermined number of times, and The step of forming a film on the substrate; in (a), at least any one of the raw material gas and the inert gas retained in the first tank is supplied to the substrate by the first supply part, and the remaining in the second tank At least one of the raw material gas and the inert gas is supplied to the substrate by the second supply part, and the raw material in the first tank in the state where at least one of the raw material gas and the inert gas stays in the first tank The gas concentration is different from the concentration of the raw material gas in the second tank in a state where at least one of the raw material gas and the inert gas stays in the second tank. |