http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202043555-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1229111a198f86af4112ecd730b55cd9
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-035
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B28-14
filingDate 2020-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3e01f7c5e5d9f9f778e57e4b9427fb5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb9340a9ea73ffaf1a453de5f2630096
publicationDate 2020-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-202043555-A
titleOfInvention Method for producing polycrystalline silicon
abstract The invention provides a method for producing polycrystalline silicon, comprising introducing a reaction gas containing hydrogen and silane and/or halosilane, into a reaction space of a vapour deposition reactor, wherein the reaction space comprises at least one filament rod which is heated by way of the passage of current and on which silicon is deposited to form a polycrystalline silicon rod. For the determination of the morphology of the silicon rod here - a first resistance value R1 of the silicon rod is determined according to R1 = U/I where U= voltage between two ends of the silicon rod, I= current strength - and a second resistance value R2 of the silicon rod is determined according to R2 = [rho]L/A where [rho]= resistivity of silicon, L = length of the silicon rod, A = cross-sectional area of the silicon rod, and a morphology index M is calculated from the ratio R1/R2, wherein the deposition is controlled in such a way that M has a value from 0.8 to 2.5.
priorityDate 2019-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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