http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202041645-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-00 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D333-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D307-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D333-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
filingDate | 2020-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31e8406ee89cd258e4862ad15cf279a8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3400fed8930168399405ee720e68b3c8 |
publicationDate | 2020-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-202041645-A |
titleOfInvention | Photoelectric conversion element, imaging element, optical sensor, material for photoelectric conversion element for imaging element, and material for photoelectric conversion element for optical sensor |
abstract | The present invention provides a photoelectric conversion element with excellent photoelectric conversion efficiency and stable performance even when a photoelectric conversion film is produced by vapor deposition using vapor deposition materials continuously supplied for vapor deposition for a long time. Furthermore, an imaging element, a photo sensor, a material for a photoelectric conversion element for an imaging element, and a material for a photoelectric conversion element for a photo sensor are provided. The photoelectric conversion element of the present invention is a photoelectric conversion element having a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, wherein the photoelectric conversion film includes a compound represented by formula (1) and an n-type semiconductor material. |
priorityDate | 2019-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 119.