abstract |
The semiconductor device of the embodiment includes a first semiconductor member, a second semiconductor member, and a first barrier film. The first semiconductor member is provided with a first insulating film and a first wiring film buried in the first insulating film and whose surface is exposed from the first insulating film. The second semiconductor member is provided with a second insulating film, and a second wiring film buried in the second insulating film and whose surface is exposed from the second insulating film. The first barrier film is formed in the area where the first wiring film and the second insulating film are in contact at the bonding interface where the first semiconductor member and the second semiconductor member are bonded, and a predetermined metal element interacts with the second insulating film. Compounds containing predetermined elements are formed. |