| abstract |
A semiconductor device includes a channel, source/drain structures, and a gate stack. The source/drain structures are on opposite sides of the channel. The gate stack is over the channel, and the gate stack includes a gate dielectric layer, a doped ferroelectric layer, and a gate electrode. The gate dielectric layer is over the channel. The doped ferroelectric layer is over the gate dielectric layer. The gate electrode is over the doped ferroelectric layer. A dopant concentration of the doped ferroelectric layer varies in a direction from the gate electrode toward the channel. |