| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R2201-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0133 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00349
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-0025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-2047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R31-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00539
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00166
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R17-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-02 |
| filingDate |
2019-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_157cc8465059fd4a74a10e7f2dc6f94f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85d5ec75f8fc336a85472c51d8884218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_caac659ca3e0ee61acbcae981bfbc74c |
| publicationDate |
2020-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202037557-A |
| titleOfInvention |
Mems device and method of forming the same |
| abstract |
The embodiments of the disclosure relates to a microelectromechanical system (MEMS) device and method of forming the same, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed. |
| priorityDate |
2019-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |