| abstract |
The present invention relates to a method of manufacturing a semiconductor device.nAccording to one embodiment, the solder bump of the first semiconductor element and the second bump electrode of the second semiconductor element are temporarily fixed to form a laminated body. Next, while setting the inside of the furnace to a temperature higher than the reduction temperature of the carboxylic acid and less than the melting temperature of the solder bump, the inside of the furnace is set to the first carboxylic acid gas concentration. Then, while raising the temperature in the furnace to the melting temperature, the furnace is set to the second carboxylic acid gas concentration. Then, the temperature in the furnace is maintained at a temperature higher than the melting temperature to melt the solder bumps. The concentration of the second carboxylic acid gas is lower than the concentration of the first carboxylic acid gas and contains the minimum concentration of the carboxylic acid gas that can reduce the oxide film of the solder bump. When the temperature in the furnace reaches the melting temperature, there is at least the second carboxylic acid gas concentration in the furnace. |