| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26566
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02439 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2020-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b8ac77de5555d754234572e634d869d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a242f41613af63542f65052205dc269e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba7a82c6efe346ebc3a62f0cdb3ca2ed |
| publicationDate |
2020-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202036666-A |
| titleOfInvention |
Semiconductor epitaxial wafer and manufacturing method thereof |
| abstract |
The present invention provides a method for manufacturing a semiconductor epitaxial wafer with higher gettering ability. The manufacturing method of the semiconductor epitaxial wafer 100 of the present disclosure is characterized by having: a first step of irradiating the surface 10A of the semiconductor wafer 10 with cluster ions 12 containing carbon, hydrogen and nitrogen as constituent elements, and the semiconductor wafer 10 A modified layer 14 in which the constituent elements of the cluster ions are dissolved in a solid solution is formed on the surface portion of the semiconductor wafer; and in the second step, an epitaxial layer 16 is formed on the modified layer 14 of the semiconductor wafer 10. |
| priorityDate |
2019-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |