| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C21C5-441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K10-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C21C5-4693 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-00 |
| filingDate |
2019-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d18c91360c2db76e5cd3317246f59761
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_934f693749290445c95d2c2329563517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c043a0ee9ea41ec6b9c80972ee22501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3dc99cfeed6aa246de2604e4f5bf0baa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9411c60c274d1b7ef7ec188572af3399 |
| publicationDate |
2020-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202034427-A |
| titleOfInvention |
Removing metal contamination from surfaces of a processing chamber |
| abstract |
A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCl4), carbon tetrachloride (CCl 4 n), a hydrocarbon (C x nH y nwhere x and y are integers) and molecular chlorine (Cl 2 n), boron trichloride (BCl 3 n), and thionyl chloride (SOCl 2 n); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I779395-B |
| priorityDate |
2018-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |