abstract |
A composition for forming a silicon-containing resist underlayer film contains at least: one or more compounds shown by the following general formula (P-0); and a thermally crosslinkable polysiloxane (Sx), nwhere R 100 nrepresents a divalent organic group substituted with one or more fluorine atoms; R 101 nand R 102 neach independently represent a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by a hetero-atom; R 103 nrepresents a linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by a hetero-atom; R 101 nand R 102 n, or R 101 nand R 103 n, are optionally bonded to each other to form a ring with a sulfur atom in the formula; and L 104 nrepresents a single bond or a linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by a hetero-atom. Thus, the present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed in a chemically amplified resist that uses an acid as a catalyst. |