http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202033692-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_45f314dc7bf9134fbbd14f50866c720e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F3-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2019-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f58e544e9ac1a0a33a7d610c5f63ad84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca6b04b88b487ed138b7109772103856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_162e2802302213eaa1b634687e998472 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d221de4385ed5d182ccfbf97ce7b2a2e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dac4cca9f5b932a164a494a680d6718d |
| publicationDate | 2020-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-202033692-A |
| titleOfInvention | Chemical-mechanical polishing slurry and its use |
| abstract | The present invention provides a chemical-mechanical polishing slurry, comprising silica abrasive particles, a halogen-containing oxidant, a polishing rate accelerant and water. The surface of the silica abrasive particles is grafted with an organic substance of which the end has a sulfonic group. The present invention also provides an application of the above CMP slurry in polishing copper and silicon. The present invention has the advantages of: 1) the CMP slurry of the present invention using a halogen-containing oxidant and having a high polishing rate to copper and silica; 2) the CMP slurry of the present invention using silica abrasive particle grafted with an organic substance of which the end having a sulfonic acid group and greatly improving the stability of the CMP slurry; 3) reducing the residue of the abrasive particles on the surface of the wafer during the CMP process, improving the polishing quality, and reducing the polishing defects, therefore improving the yield of the product. |
| priorityDate | 2018-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.