http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202030311-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c99757c142b1f259fdf728f6f4205f27 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-14 |
filingDate | 2019-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dbdfa340458b2bb4bec596fe2abea06 |
publicationDate | 2020-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-202030311-A |
titleOfInvention | A SILICON ETCHANT WITH HIGH Si/SiO ETCHING SELECTIVITY AND ITS APPLICATION |
abstract | The invention is related to a silicon etchant with high Si/SiO2 etching selectivity and its application. The silicon etchant comprises at least one ketal and at least one quaternary ammonium hydroxide compound. The weight percentage of the ketal is 20~99 wt.% based on the total weight of the etchant and the weight percentage of the quaternary ammonium hydroxide compound is 0.1~10 wt.% based on the total weight of the etchant. |
priorityDate | 2019-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.