http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202030311-A

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filingDate 2019-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dbdfa340458b2bb4bec596fe2abea06
publicationDate 2020-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-202030311-A
titleOfInvention A SILICON ETCHANT WITH HIGH Si/SiO ETCHING SELECTIVITY AND ITS APPLICATION
abstract The invention is related to a silicon etchant with high Si/SiO2 etching selectivity and its application. The silicon etchant comprises at least one ketal and at least one quaternary ammonium hydroxide compound. The weight percentage of the ketal is 20~99 wt.% based on the total weight of the etchant and the weight percentage of the quaternary ammonium hydroxide compound is 0.1~10 wt.% based on the total weight of the etchant.
priorityDate 2019-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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