abstract |
To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400 DEG C, which is measured by thermal desorption spectroscopy, is less than or equal to 130 % of the amount of released hydrogen molecules at 300 DEG C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition. |