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filingDate 2019-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73f117b2b5145b39d489d61b156cef21
publicationDate 2020-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-202027251-A
titleOfInvention High voltage device and manufacturing method thereof
abstract The present invention provides a high voltage device and manufacturing method thereof. The high voltage device is used in a power stage of a switching regulator as a lower switch. The high voltage device includes at least one lateral diffused metal oxide semiconductor (LDMOS) device and at least one Schottky barrier diode (SBD). The LDMOS device includes: a well, a body region, a gate, a source, and a drain. The SBD includes a Schottky metal layer and a Schottky semiconductor layer. The Schottky metal layer is electrically connected to the source, and the Schottky semiconductor layer is in contact with the well.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I777525-B
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