Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa907cbef2178b7f30a042518be6b17b |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06524 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80895 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-187 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11551 |
filingDate |
2019-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81aa3f8a36e66fe60a573aa11e9c91f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c4b185624ca6c26c67d03626e44b581 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ef26faac43649542766d34731177a47 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6c270000fe35f784703f8a6869d0625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31836936303707fd24ccfdaeb0c77a48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90c337ef2783edaff62cd850f88c6cc6 |
publicationDate |
2020-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-202023027-A |
titleOfInvention |
Bonded memory device and fabrication method thereof |
abstract |
A method for forming a bonded semiconductor component includes the following steps. First, a first wafer and a second wafer are formed. The first wafer includes a functional layer over the substrate. The single crystal silicon is necessary for the substrate, and the substrate may not include single crystal silicon. The first wafer can be inverted to bond to the second wafer so as to form a bonded semiconductor device such that the substrate is on the top of the functional layer. At least a portion of the substrate is removed to form a top surface of the bonded semiconductor device. Additionally, bond pads are formed over the top surface. |
priorityDate |
2018-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |