| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y99-00 |
| filingDate |
2019-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b91e7ebd8134ee56dc718a00d2130ed1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5960af4de5224841c3164c82729bb9c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff88ae025115b985e9f1634f3283fb38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b819ff1ea8c37b8a3b221994fd6e2bde
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19a63662706f93329bcb8a2320ec4a0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_335f86dda123007ac7cf8b364a07747e |
| publicationDate |
2020-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202021729-A |
| titleOfInvention |
Method for polishing wafer |
| abstract |
A wafer is polished by performing a chemical reaction to change a property of a first portion of a material layer on the wafer using a first chemical substance. A first rinse is performed to remove the first chemical substance and retard the chemical reaction. A mechanical polishing process is then performed to remove the first portion of the material layer. |
| priorityDate |
2018-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |