| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f3518dca003902d9f332ad08ac9a6ffe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14649 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-142 |
| filingDate |
2019-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a70ea017845e2a2d95acf2f94e5ccbf8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_949d6620229d5cc5f5362242c61a0de0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d4927818aacd6a826337a600898778d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb56dc827ffc4e5c64b18bfa44ed3aa8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0367f232325a62ebf737b59dbdc5f2e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a116ef9f70047e87135bf5cca24ef915 |
| publicationDate |
2020-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202013695-A |
| titleOfInvention |
Imaging element and imaging device |
| abstract |
An imaging element according to an embodiment of the present invention includes: a semiconductor substrate having one surface and the other surface facing each other, and having a through hole penetrating between the one surface and the other surface; and a first photoelectric conversion portion provided on the semiconductor Above one surface of the substrate; a through electrode, which is electrically connected to the first photoelectric conversion portion, and penetrates the semiconductor substrate in the through hole; a first dielectric film, which is provided on one surface of the semiconductor substrate and has the first Film thickness; and a second dielectric film, which is provided on the side of the through-hole and has a second film thickness that is thinner than the first film thickness. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I747733-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355518-B2 |
| priorityDate |
2018-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |