Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33c922e05f6133b7d72dbb849d77487d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2379-08 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-1032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-1067 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L79-08 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G73-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J5-18 |
filingDate |
2019-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_499f19ef1ae91c40638ca5a41969b2b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_590c2079174c051f1b42f77d9d590845 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4b40f2760ed4d7cf2220f4bf4c6ea6c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_998f6ddbaaf869b18f9cfaa03f5cf3cc |
publicationDate |
2020-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-202012500-A |
titleOfInvention |
Polyimide precursor solution, polyimide film prepared using the same, and flexible device |
abstract |
The present invention provides a polyimide precursor solution, a polyimide film prepared by using same and a flexible device. The polyimide precursor is prepared by reacting tetracarboxylic dianhydride and diamine in a molar ratio of 1: 0.93 to 1: 0.99, and includes a polyimide precursor having a number average molecular weight of 38,000 g/mol or more, thereby allowing the preparation of a polyimide film having heat resistance. The polyimide precursor solution has a controlled content of bubbles through quantification of the defoaming property thereof, thereby exhibiting improved storage stability. Also, the polyimide film prepared from the precursor solution has reduced bubbles therein, and thus the formation of crack in an inorganic film can be suppressed during device formation. |
priorityDate |
2018-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |