| abstract |
The embodiment provides a magnetic memory device capable of improving resistance change rate and retention.nA magnetic memory device according to an embodiment includes a magnetoresistive element including a non-magnetic body and a laminate provided on the non-magnetic body. The laminate includes a first ferromagnetic body provided on the non-magnetic body, a second ferromagnetic body exchange-coupled with the first ferromagnetic body, and the first ferromagnetic body and the second ferromagnetic body Between the magnetic body. The magnetic body contains a magnetic element and at least one compound selected from carbide, nitride, and boride. |