| abstract |
The present invention provides a positive photoresist composition for EUV lithography that can form a photoresist film having high sensitivity to extreme ultraviolet rays. The positive type photoresist composition of the present invention includes a copolymer and a solvent, the copolymer having a monomer unit (A) represented by the general formula (I) and a monomer unit (B) represented by the general formula (II) ). In the formula, R 1 represents an organic group having 5 or more fluorine atoms, R 2 represents a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or an alkyl group substituted with a fluorine atom, and R 3 represents a hydrogen atom and an unsubstituted group. Or an alkyl group substituted with a fluorine atom, p and q are integers of 0 to 5, and p + q = 5. |