| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_15bd6a1febacd9542fb1af4a1d3a32e2 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2018-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa35af3ddd367aab5ffc522923bc6b1c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17c7279b12566fe6ea36862097e73317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d74d93f6f794f40f65ae59867fcca32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4d0fc35b3b64d19be85491c0f83c4af |
| publicationDate |
2019-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201945592-A |
| titleOfInvention |
Etching solution composition for etching a copper or copper alloy layer and a multilayer film containing molybdenum or molybdenum alloy layer, an etching method using the same, and a method for manufacturing a display device or an IGZO semiconductor using the etching method |
| abstract |
The invention discloses an etching liquid composition for etching a multilayer film containing a copper or copper alloy layer and a molybdenum or molybdenum alloy layer. The etching liquid composition includes: a hydrogen peroxide; an organic acid or its salts; A tertiary alcohol amine compound of formula (I): R 1 , R 2 and R 3 are independent C1 to C5 linear or branched alkyl groups; a nitrogen-containing heterocyclic compound; and water; wherein the pH value of the etching solution composition is between 3 and 6 And does not contain fluoride ions. |
| priorityDate |
2018-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |