http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201943099-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82cbc291d77c061ac9a216f86ec010a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_daadbce47d0b5a698587499f6f1126ec |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-808 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 |
| filingDate | 2019-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74cd4e50e2f8378345093525df7502d9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37bec14a70de145b4e52aa6d275ca8ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f8273b854ea028beb9d56b469d5cf03 |
| publicationDate | 2019-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201943099-A |
| titleOfInvention | LED transistor composite element |
| abstract | The present invention is based on the premise that an active matrix drive is performed on a plurality of light-emitting elements, and a TFT substrate is not required, and a plurality of light-emitting elements can be arranged in an ultra-thin and high-density. The LED transistor composite device includes a layered portion of an n-type or p-type semiconductor layer in which a plurality of group 13 nitride-based compound thin-film crystals are laminated on a substrate. The layered portion includes: a first layer. An n-type semiconductor layer and a p-type semiconductor layer sandwiching a light-emitting layer; a second build-up portion laminated on the first build-up portion, and the n-type semiconductor layer and the p-type semiconductor layer are alternately laminated; and a third build-up portion, An interlayer insulating film is laminated on the second laminated portion, and the n-type semiconductor layer and the p-type semiconductor layer are alternately laminated. The LED is formed by the first laminated portion, and the first transistor is formed by the second laminated portion. A second transistor is constituted by the third laminated portion. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I803827-B |
| priorityDate | 2018-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.