http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201942321-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a665d61597c2731ab4130971ee397dc9 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1454 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2019-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7f574d0259c94d032e1041a66780c2b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c64e6b9c57fc485b0f1872fd13d6df60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_709bab7be00316393ba56d6e86090c50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e962daa8e899f5294fa8c79cc08a7c77 |
| publicationDate | 2019-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201942321-A |
| titleOfInvention | Composition for polishing gallium compound-based semiconductor substrate, method for polishing gallium compound-based semiconductor substrate, and polishing composition set |
| abstract | According to the present invention, it is possible to provide a polishing composition for polishing a gallium compound-based semiconductor substrate. The polishing composition includes silicon dioxide abrasive particles, a compound C pho having a phosphate group or a phosphonic acid group, and water. In addition, according to the present invention, a method for polishing a gallium compound-based semiconductor substrate can be provided. The method includes, in order, a first polishing step of polishing with a slurry S1 containing abrasive particles A1 and water, and a second polishing step of polishing with a slurry S2 containing abrasive particles A2 and water. The abrasive particles A2 include silicon dioxide abrasive particles. The slurry S2 further contains a compound C pho having a phosphate group or a phosphonic acid group. The concentration of the slurry S1-based compound, not containing the C pho, or the above-mentioned compound C pho [wt%] less than the concentration of the slurry S2 in the above-mentioned compound C pho [wt%]. |
| priorityDate | 2018-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 152.