http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201940742-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c19a91365ed494d9fe27d24190d4459f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-067 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23G1-103 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 2018-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c4de69bc7c27f2a2836caa5c9f2d3bf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_633dfb2f08b0b46fbcb170fb985f9c9b |
| publicationDate | 2019-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201940742-A |
| titleOfInvention | Copper thick film etching solution |
| abstract | Provided is an etching solution for thick copper film, which can maintain the manufacturing speed as before even if the copper film thickness becomes thicker, and the etching rate is high, and etching can be performed even at a high copper ion concentration. An etching solution for copper thick films containing hydrogen peroxide, strongly acidic substances, amine compounds, hydrogen peroxide decomposition inhibitors, azoles, and water, and having a pH of less than 2, even at a copper ion concentration of 20,000 ppm Under the copper ion concentration, the copper film can also be etched at an etching rate of 380 nm / min or more, and the cone angle can also be adjusted to 30∘ ~ 80∘. |
| priorityDate | 2018-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 197.