http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201940734-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
filingDate 2014-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a99461710665b8802ed02538fe8f0a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44b3dd9b1d61f4c34c4472de2539c274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6c40047b46afb11d5f61ad06c3924e3
publicationDate 2019-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201940734-A
titleOfInvention Method for depositing silicon nitride film
abstract Methods and precursors are provided for depositing a silicon nitride film by atomic layer deposition (ALD). In some embodiments, the silicon precursor includes an iodine ligand. The silicon nitride film has a relatively uniform etch rate for both vertical and horizontal portions when deposited on a three-dimensional structure such as a FinFET or other type of multi-gate FET. In some embodiments, the various silicon nitride films disclosed herein have an etch rate less than half the thermal oxide removal rate for diluted HF (0.5%).
priorityDate 2013-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID783
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556970
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID139512
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419554831
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559593
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID10290728
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6547
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID947
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415729976
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425193155
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559592
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458392451
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419544405
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426453095
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID807
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID61621
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID12219
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419488277
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414859283
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5460631

Total number of triples: 50.