| abstract |
An etching solution suitable for both tungsten-containing metals and TiN-containing materials is described herein, which comprises: water, one or more than one oxidizing agent, and one or more than one component selected from the group consisting of: One or more fluorine-containing etching compounds, one or more organic solvents, one or more chelating agents, one or more corrosion inhibitors, and one or more surfactants. |