abstract |
An object of the present invention is to provide a treatment liquid and a cleaning method for removing tantalum and tungsten adhering to an end surface portion, a back surface portion, and the like of a semiconductor wafer. The solution of the present invention is a treatment liquid for cleaning a semiconductor wafer, which contains (A) hypochlorous acid ions and (C) a solvent, and has a pH of more than 7 and less than 12.0 at 25 °C. A method of cleaning a semiconductor wafer is provided by removing the germanium and tungsten from the semiconductor wafer by contacting the processing liquid with a semiconductor wafer having germanium or tungsten. |