| abstract |
The invention pertains to the field of methods for preparing inorganic metal-containing films. The method for preparing an inorganic metal-containing film comprises contacting a solid substrate with a compound of the formula (I) or (II) in a gaseous state Wherein A is NR 2 or OR, wherein R is alkyl, alkenyl, aryl or decyl, E is NR or O, n is 1, 2 or 3, and R' is hydrogen, alkyl, alkenyl, aryl or decyl, Wherein if n is 2 and E is NR or A is OR, at least one of NR or OR does not have a hydrogen atom at the 1-position. |