http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201926721-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2018-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6789cb3e50e5b75804247e087e9f0804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c709991ce437a25e1671f9b2f5fbc5e9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec8768af0c398a4dfbab209433ad01f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_293ba18ae7374986a341e0377a570434 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_457726ea32fdd52528fe9ceab2427536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d0f6b5672cc71e4c15c6969d70c3429 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e07051022ff1e5f4d0e393247ed1b91f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f89831fb0c890397b9fa21867e03cfdc |
| publicationDate | 2019-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201926721-A |
| titleOfInvention | Semiconductor structure and method of forming same |
| abstract | The present disclosure describes various non-planar semiconductor components having one or more metal rail conductors, such as fin field effect transistors for providing an example, and various methods for fabricating such non-planar semiconductor components. In some cases, one or more metal rail conductors can be electrically connected to the gate, source, and/or drain regions of the various non-planar semiconductor components. In these cases, one or more metal rail conductors may be used to electrically connect the gate regions, source regions, and/or drain regions of various non-planar semiconductor components to other gate regions, sources of various non-planar semiconductor components. Polar regions and/or drain regions and/or other semiconductor components. However, in other cases, one or more metal rail conductors may be isolated from the gate, source, and/or drain regions of these various non-planar semiconductor components. This isolation prevents electrical connection between one or more metal rail conductors and the gate, source, and/or drain regions of these various non-planar semiconductor components. |
| priorityDate | 2017-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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