| abstract |
The present invention is a compound semiconductor substrate in which a compound semiconductor substrate which can be easily controlled to be bent is provided. The compound semiconductor substrate includes: a SiC (tantalum carbide) layer, and an AlN (aluminum nitride) buffer layer formed on the SiC layer, and a lower composite layer formed on the AlN buffer layer, and an upper portion formed on the lower composite layer Composite layer. The lower composite layer includes a plurality of lower Al (aluminum) nitride semiconductor layers laminated in the vertical direction, and a lower GaN (gallium nitride) layer formed between each of the plurality of Al nitride semiconductor layers. The upper composite layer includes a plurality of upper GaN layers stacked in the vertical direction and an upper Al nitride semiconductor layer formed between each of the plurality of upper GaN layers. |