abstract |
The present disclosure describes various non-planar semiconductor components having one or more metal rail conductors, such as fin field effect transistors for providing an example, and various methods for fabricating such non-planar semiconductor components. In some cases, one or more metal rail conductors can be electrically connected to the gate, source, and/or drain regions of the various non-planar semiconductor components. In these cases, one or more metal rail conductors may be used to electrically connect the gate regions, source regions, and/or drain regions of various non-planar semiconductor components to other gate regions, sources of various non-planar semiconductor components. Polar regions and/or drain regions and/or other semiconductor components. However, in other cases, one or more metal rail conductors may be isolated from the gate, source, and/or drain regions of these various non-planar semiconductor components. This isolation prevents electrical connection between one or more metal rail conductors and the gate, source, and/or drain regions of these various non-planar semiconductor components. |