http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201926564-A

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publicationDate 2019-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201926564-A
titleOfInvention Non-planar semiconductor component, integrated circuit, fin field effect transistor array
abstract The present disclosure describes various non-planar semiconductor components having one or more metal rail conductors, such as fin field effect transistors for providing an example, and various methods for fabricating such non-planar semiconductor components. In some cases, one or more metal rail conductors can be electrically connected to the gate, source, and/or drain regions of the various non-planar semiconductor components. In these cases, one or more metal rail conductors may be used to electrically connect the gate regions, source regions, and/or drain regions of various non-planar semiconductor components to other gate regions, sources of various non-planar semiconductor components. Polar regions and/or drain regions and/or other semiconductor components. However, in other cases, one or more metal rail conductors may be isolated from the gate, source, and/or drain regions of these various non-planar semiconductor components. This isolation prevents electrical connection between one or more metal rail conductors and the gate, source, and/or drain regions of these various non-planar semiconductor components.
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priorityDate 2017-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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