| abstract |
The present disclosure provides a semiconductor device such as a fin-shaped field effect transistor and a method of manufacturing the same. In some embodiments, a method includes forming a plurality of gate spacers on a semiconductor fin, and forming a first gate stack over the fin. A first sacrificial material is formed over the gate stack, the first sacrificial material has a large selectivity to the gate spacer, and a second sacrificial material with a large selectivity is formed on the source. |