| abstract |
A semiconductor device structure having a dielectric member and a method of forming the above-mentioned dielectric member are described here. In some examples, the dielectric component is formed by an atomic layer deposition process, and then by a temperature-annealing process. The above-mentioned dielectric member may have a high density, a low carbon concentration, and a low dielectric constant value. The dielectric component formed according to the embodiment of the present invention has improved resistance to etching chemicals, resistance to plasma damage, and resistance to physical bombardment, while maintaining a low dielectric constant value for target capacitor efficiency. |