http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201924067-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e6d67894a893256e5b4d85401e466143 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1087 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4925 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2018-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9e162d1d36d20ba515fdf8423864bd3 |
| publicationDate | 2019-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201924067-A |
| titleOfInvention | Trench type field effect transistor (trench FET) with improved poly gate contact |
| abstract | The present invention provides an integrated circuit (IC) device that can include a plurality of trench-type field effect transistors (trench FETs). Each trench FET may include: a poly gate trench formed in an epitaxial region; a poly gate formed in the poly gate trench; and a front side poly gate contact And a lateral gate coupling element (eg, a side "band") extending over and adjacent to at least one surface of the poly gate formed in the trench and contacting the at least one surface and The poly gate is electrically connected to the front side poly gate contact. The lateral gate coupling element can be formed of a material having a conductivity higher than one of the polysilicon gates, such as tungsten or other metal. The lateral gate coupling element can be at least partially positioned in the poly gate trench. |
| priorityDate | 2017-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425762086 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23964 |
Total number of triples: 24.