| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45561
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4583
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 |
| filingDate |
2018-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_092869bd8635eb2dac0d27631a925f68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88ea28089a0c140eb52d14f2db4ce415
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_287f776beccd5f37ac972ab1f1db50f0 |
| publicationDate |
2019-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201924001-A |
| titleOfInvention |
Semiconductor device manufacturing method, substrate processing device, and recording medium |
| abstract |
The present invention controls the in-plane film thickness distribution of a film formed on a substrate.n n n The method for manufacturing a semiconductor device according to the present invention includes the steps of: preparing a substrate; and supplying an inert gas from a first supply unit to the substrate; supplying an inert gas from a second supply unit to the substrate; The step of forming a film on the substrate by supplying the processing gas to the substrate with a straight line between the 2 supply unit and the center of the substrate and the third supply unit on the opposite side to the first supply unit; The film thickness distribution within the substrate surface of the film formed on the substrate is adjusted by balancing the flow rate of the inert gas supplied from the supply unit and the flow rate of the inert gas supplied from the second supply unit. |
| priorityDate |
2017-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |