| abstract |
An object of the present invention is to provide a composition for forming a resist underlayer film, a resist underlayer film, a resist underlayer film which can form a resist underlayer film having excellent flatness and pattern bending resistance while maintaining organic solvent resistance. Method for forming etchant underlayer film, method for manufacturing patterned substrate, and compound. The present invention is a composition for forming a resist underlayer film, comprising: a compound represented by the following formula (1); and a solvent. In the following formula (1), Ar 1 is an m-valent aromatic heterocyclic group having 5 to 20 ring members. m is an integer from 1 to 11. Ar 2 is a group bonded to a carbon atom of an aromatic heterocyclic ring in Ar 1 and is (n + 1) -valent aromatic carbocyclic group having 6 to 20 ring members or 5 to 20 ring members ( n + 1) valent aromatic heterocyclic group. n is an integer from 0 to 12. R 1 is a monovalent organic group having 1 to 20 carbon atoms, a hydroxyl group, a halogen atom, or a nitro group. |