| abstract |
A method and composition for manufacturing a porous low-k dielectric film by chemical vapor deposition, comprising the steps of: providing a substrate in a reaction chamber; and inputting a compound containing a silicon ring The gas-phase reagent of at least one structure-forming precursor is in the reaction chamber, with or without a porogen; the gas-phase reagent is applied with energy in the reaction chamber to induce the gas-phase reagent to react and deposit A nascent film on the substrate, wherein the nascent film contains the pore former, and the nascent film is deposited; and removing, at least in part, the pore former contained in the nascent film, and providing pores and A film with a dielectric constant of 3.0 or lower. In a specific embodiment, the structure-forming precursor further includes a hardening additive. |